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Journal of Applied Physics

Volumn 107, Issue 2, 2010, Pages

Tunable rectification and giant positive magnetoresistance in Ge 1-xMnx/Ge epitaxial heterojunction diodes

(10) Tian, Y F a Deng, J X a Yan, S S a Dai, Y Y a Zhao, M W a Chen, Y X a Liu, G L a Mei, L M a Liu, Z Y b Sun, J R c

a SHANDONG UNIVERSITY (China)

b YANSHAN UNIVERSITY (China)

c INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC SEMICONDUCTOR; GE SUBSTRATES; HETEROJUNCTION DIODES; I - V CURVE; INTRINSIC SEMICONDUCTORS; P-TYPE; PEAK VALUES; POSITIVE MAGNETORESISTANCE; ROOM TEMPERATURE; TUNABLE RECTIFICATION;

CRYSTAL GROWTH; ELECTRIC RESISTANCE; GERMANIUM; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MAGNETIC SEMICONDUCTORS; MAGNETOELECTRONICS; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR DIODES;

GIANT MAGNETORESISTANCE;

EID: 75749095239 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3285274 Document Type: Article

Times cited : (8)

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