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Physical Review Letters

Volumn 100, Issue 12, 2008, Pages

Extremely large magnetoresistance in boron-doped silicon

(5) Schoonus, J J H M a Bloom, F L a Wagemans, W a Swagten, H J M a Koopmans, B a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); IMPACT IONIZATION; MAGNETIC FIELDS; MAGNETORESISTANCE; SILICA; SPECTROSCOPIC ANALYSIS;

ADMITTANCE SPECTROSCOPY; AUTOCATALYTIC PROCESSES;

SILICON;

EID: 41549136997 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.100.127202 Document Type: Article

Times cited : (93)

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