Electronic transport of the manganite-based heterojunction with high carrier concentrations

Applied Physics Letters

Volumn 90, Issue 19, 2007, Pages

  Xie, Y W ^a   Sun, J R ^a   Wang, D J ^a   Liang, S ^a   Lu W M ^a   Shen, B G ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; MAGNETIC FIELD EFFECTS; MANGANITES; TRANSPORT PROPERTIES;

CHARGE TUNNELING; DEPLETION WIDTH; JUNCTION RESISTANCE; NEWMAN EQUATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34248368491     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2728750     Document Type: Article

References (14)

1. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.88.027204 88, 027204 (2002); J. Zhang, H. Tanaka, and T. Kawai, Appl. Phys. Lett. 80, 4378 (2002).
2. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.88.027204 88, 027204 (2002); J. Zhang, H. Tanaka, and T. Kawai, Appl. Phys. Lett. 80, 4378 (2002).
3. J. R. Sun, C. M. Xiong, T. Y. Zhao, S. Y. Zhang, Y. F. Chen, and B. G. Shen, Appl. Phys. Lett. 84, 1528 (2004).
4. F. M. Postma, R. Ramaneti, T. Banerjee, H. Gokcan, E. Haq, D. H. A. Blank, R. Jansen, and J. C. Lodder, J. Appl. Phys. 95, 7324 (2004).
5. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 86, 112508 (2005).
6. J. Z. Sun, D. W. Abraham, R. A. Rao, and C. B. Eom, Appl. Phys. Lett. 74, 3017 (1999).
7. M. Bibes, S. Valencia, L. Balcells, B. Martínez, J. Fontcuberta, M. Wojcik, S. Nadolski, and E. Jedryka, Phys. Rev. B 66, 134416 (2002).
8. D. J. Wang, Y. W. Xie, C. M. Xiong, B. G. Shen, and J. R. Sun, Europhys. Lett. 73, 401 (2006).
9. B. L. Sharma and R. K. Purohit, Semiconductor Heterojunctions (Pergamon, Oxford, 1974), pp. 1-13.
10. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 63-132.
11. V. Yu. Ivanov, V. D. Travkin, A. A. Mukhin, S. P. Lebedev, A. A. Volkov, A. Pimenov, A. Loidl, A. M. Balbashov, and A. V. Mozhaev, J. Appl. Phys. 83, 7180 (1998).
12. S. Suzuki, T. Yamamoto, H. Suzuki, K. Kawaguchi, K. Takahashi, and Y. Yoshisato, J. Appl. Phys. 81, 6830 (1997).
13. M. Sugiura, K. Uragou, M. Noda, M. Tachiki, and T. Kobayashi, Jpn. J. Appl. Phys., Part 1 38, 2675 (1999).
14. J. R. Sun, H. W. Yeung, H. K. Wong, T. Zhu, and B. G. Shen, Eur. Phys. J. B 35, 481 (2003).