High performance germanium N+ /P and P+ /N junction diodes formed at low Temperature (≤380 °c) using metal-induced dopant activation

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Park, Jin Hong ^a   Kuzum, Duygu ^a   Tada, Munehiro ^a,b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; GERMANIUM; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON;

DOPANT ACTIVATIONS; EPITAXIALLY GROWN; FORWARD CURRENTS; JUNCTION DIODES; LOW RESISTIVITIES; LOW TEMPERATURES; ON/OFF RATIOS; OXIDE SEMICONDUCTORS;

SEMICONDUCTOR JUNCTIONS;

EID: 56249092758     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3025849     Document Type: Article

References (7)

1. F. A. Trumbore, Bell Syst. Tech. J. 39, 205, (1960).
2. C. O. Chui and K. C. Saraswat, Germanium-Based Technologies; From Materials to Devices (Elsevier Science, Amsterdam, 2007), p. 173.
3. H. Shang, K.-L. Lee, P. Kozlowski, C. D'Emic, I. Babich, E. Sikorski, MeikeiIeong, H.-S. P. Wong, K. Guarini, and W. Haensch, IEEE Electron Device Lett. 25, 135 (2004).
4. J.-H. P. M. Tada, P. Kapur, H. Peng, and K. C. Saraswat, J. Appl. Phys. 104, 064501 (2008).
5. S.-W. Lee, T.-H. Ihn, and S.-K. Joo, Appl. Phys. Lett. 69, 380 (1996).
6. A. R. Joshi and K. C. Saraswat, IEEE Trans. Electron Devices 50, 1058 (2003).
7. D. Kuzum, T. Krishnamohan, A. J. Pethe, A. K. Okyay, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. 29, 328 (2008).