Conversion of direct to indirect bandgap and optical response of B substituted InN for novel optical devices applications

Journal of Lightwave Technology

Volumn 28, Issue 2, 2010, Pages 223-227

  Amin, Bin ^a   Ahmad, Iftikhar ^a   Maqbool, Muhammad ^b  

^a HAZARA UNIVERSITY   (Pakistan)

^b BALL STATE UNIVERSITY   (United States)

Author keywords

Boron; Indium; Optical materials; Optical properties

Indexed keywords

ABSORPTION COEFFICIENTS; BAND GAPS; BAND-GAP SEMICONDUCTORS; BORON CONCENTRATIONS; CONCENTRATION OF; CONCENTRATION-DEPENDENT; FRACTIONAL CONCENTRATION; FREQUENCY DEPENDENT; HIGHER FREQUENCIES; LOWER FREQUENCIES; OPTICAL RESPONSE; RESULTING MATERIALS;

ABSORPTION; BORON; BORON COMPOUNDS; CONCENTRATION (PROCESS); ENERGY GAP; INDIUM; OPTICAL CONDUCTIVITY; OPTICAL DEVICES; OPTICAL INSTRUMENTS; OPTICAL MATERIALS; REFLECTION; ZINC;

MATERIALS PROPERTIES;

EID: 75649145394     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2009.2034027     Document Type: Article

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