Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1290-1293

  Aldabergenova, S B ^a   Frank, G ^a   Strunk, H P ^a   Maqbool, M ^b   Richardson, H H ^b   Kordesch, M E ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b OHIO UNIVERSITY   (United States)

Author keywords

Amorphous semiconductors; Composition; Electron diffraction scattering; Luminescence; Microcrystallinity; Nanocrystals; Raman scattering; Rare earths in glasses; Short range order; TEM STEM

Indexed keywords

ALUMINUM; ANNEALING; COMPOSITION; HOLMIUM; LIGHT EMISSION; LUMINESCENCE; MAGNETRON SPUTTERING; NITROGEN; POSITIVE IONS; RADIOFREQUENCY SPECTROSCOPY; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SEMICONDUCTORS; ELECTRON DIFFRACTION/SCATTERING; MICROCRYSTALLINITY; NANOCRYSTALS; RARE EARTHS IN GLASSES; SHORT RANGE ORDER; TEM/STEM;

SEMICONDUCTING FILMS;

EID: 33745442723     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.11.120     Document Type: Article

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