High-quality homoepitaxial diamond films grown at normal deposition rates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 A, 2001, Pages

  Wang, Chunlei ^a   Irie, Masatake ^a   Ito, Toshimichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Cathodoluminescence; CVD; Free exciton; High quality homoepitaxial diamond; Non radiative relaxation path

Indexed keywords

CATHODOLUMINESCENCE; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; PARTICLES (PARTICULATE MATTER); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIATION EFFECTS; RELAXATION PROCESSES; THERMAL EFFECTS;

ABNORMAL PARTICLES; CATHODOLUMINESCENCE SPECTRA; DEPOSITION RATES; HILLOCKS; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM; NONRADIATIVE RELAXATION PATHS;

DIAMOND FILMS;

EID: 0035272072     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l212     Document Type: Letter

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