Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4319-4325

  Shen, Min ^a   Saikin, Semion ^a,b,c   Cheng, Ming C ^a  

^a Clarkson University   (United States)

^b CLARKSON UNIVERSITY   (United States)

^c KAZAN STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC GATES; SINGLE ELECTRON SPIN DENSITY; SPIN-POLARIZED ELECTRONS;

COMPUTER SIMULATION; ELECTRON TUNNELING; ELECTRONS; FERROMAGNETIC MATERIALS; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; MONTE CARLO METHODS; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 7544234095     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1794893     Document Type: Article

References (60)

1. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294, 1488 (2001).
2. I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004).
3. H. Akinaga and H. Ohno, IEEE Trans. Nanotechnol. l, 19 (2002).
4. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
5. X. F. Wang, P. Vasilopoulos, and F. M. Peelers, Appl. Phys. Lett. 80, 1400 (2002).
6. M. Governale, D. Boese, U. Zulicke, and C. Schroll, Phys. Rev. B 65, 140403 (2002).
7. J. C. Egues, G. Burkard, and D. Loss, Appl. Phys. Lett. 82, 2658 (2003).
8. J. Schliemann, J. C. Egues, and D. Loss, Phys. Rev. Lett. 90, 146801 (2003).
9. K. C. Hall, W. H. Lau, K. Gundogdu, M. E. Flatte, and T. F. Boggess, Appl. Phys. Lett. 83, 2937 (2003).
10. Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, Phys. Rev. Lett. 83, 4196 (1999).
11. Y. Kalo, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Nature (London) 427, 50 (2004).
12. J. Nitta, T. Akazaki, and H. Takayanagi, Phys. Rev. Lett. 78, 1335 (1997).
13. J. B. Miller, D. M. Zumbuhl, C. M. Marcus, Y. B. Lyanda-Geller, D. Goldhaber-Gordon, K. Campman, and A. C. Gossard, Phys. Rev. Lett. 90, 076807 (2003).
14. V. F. Motsnyi, J. De Boeck, J. Das, W. Van Roy, G. Borghs, E. Goovaerts, and V. I. Safarov, Appl. Phys. Lett. 81, 265 (2002).
15. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, Nature (London) 402, 790 (1999).
16. K. H. Ploog, J. Appl. Phys. 91, 7256 (2002).
17. P. R. Hammar and M. Johnson, Phys. Rev. Lett. 88, 066806 (2002).
18. A. T. Hanbicki, B. T. Jonker, G. Itskos, G. Kioseoglou, and A. Petrou, Appl. Phys. Lett. 80, 1240 (2002).
19. G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. J. van Wees, Phys. Rev. B 62, R4790 (2000).
20. P. C. van Son, H. van Kempen, and P. Wyder, Phys. Rev. Lett. 58, 2271 (1987).
21. M. Johnson and R. H. Silsbee, Phys. Rev. B 35, 4959 (1987).
22. M. Johnson and J. Byers, Phys. Rev. B 67, 125112 (2003).
23. E. I. Rashba, Phys. Rev. B 62, R16267 (2000).
24. J. D. Albrecht and D. L. Smith, Phys. Rev. B 68, 035340 (2003).
25. A. T. Hanbicki et al., Appl. Phys. Lett. 82, 4092 (2003).
26. X.-G. Zhang and W. H. Butler, J. Phys.: Condens. Matter 15, R1603 (2003).
27. M. Julliere, Phys. Lett. A 54, 225 (1975).
28. S. Saikin, M. Shen, M.-C. Cheng, and V. Privman, J. Appl. Phys. 94, 1769 (2003).
29. A. Lusakowski, J. Wrobel, and T. Dietl, Phys. Rev. B 68, R081201 (2003).
30. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
31. L. Sun, X. Y. Liu, M. Liu, G. Du, and R. Q. Han, Semicond. Sci. Technol. 18, 576 (2003).
32. W. H. Butler, X.-G. Zhang, X. Wang, Jan van Ek, and J. M. MacLaren, J. Appl. Phys. 81, 5518 (1997).
33. B. K. Nikolic and S. Souma, cond-mat/0402662.
34. L. C. Davis and C. B. Duke, Phys. Rev. 184, 764 (1969).
35. V. I. Perel, S. A. Tarasenko, I. N. Yassevich, S. D. Ganichev, V. V. Bel'kov, and W. Prettl, Phys. Rev. B 67, 201304 (2003).
36. A. Voskoboynikov, S. S. Liu, and C. P. Lee, Phys. Rev. B 58, 15397 (1998).
37. S. Pramanik, S. Bandyopadhyay, and M. Cahay, Phys. Rev. B 68, 075313 (2003).
38. A. A. Kiselev and K. W. Kim, Phys. Rev. B 61, 13115 (2000).
39. A. Bournel, P. Dollfus, S. Galdin, F.-X. Musalem, and P. Hesto, Solid State Commun. 104, 85 (1997).
40. M. Shen, S. Saikin, M.-C. Cheng, and V. Privman, Math. Comput. Simul. 65, 351 (2004).
41. Yu. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984).
42. G. Dresselhaus, Phys. Rev. 100, 580 (1955).
43. HB CRC Handbook of Chemistry and Physics 83rd ed. edited by D. R. Lide (CRC, Boca Raton, 2002).
44. Y.-K. Liu, C. Scheck, R. Schad, Y. Ding, C. Alexander, Jr., and G. Zangari, J. Appl. Phys. 95, 6546 (2004).
45. Y. B. Xu, E. T. M. Kernohan, D. J. Freeland, A. Ercole, M. Tselepi, and J. A. C. Bland, Phys. Rev. B 58, 890 (1998).
46. J. R. Waldrop, Appl. Phys. Lett. 44, 1002 (1984).
47. Website: www. ioffe. rssi. ru/SVA/NSM/Semicond/AlGaAs/bandstr. html
48. R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Phys. Rev. B 69, 193304 (2004).
49. M. Cardona, N. E. Christensen, and G. Fasol, Phys. Rev. B 38, 1806 (1988).
50. M. I. D'yakonov and V. I. Perel, Sov. Phys. JETP 33, 1053 (1971).
51. J. Sinova, D. Culcer, Q. Niu, N. A. Sinitsyn, T. Jungwirth, and A. H. MacDonald, Phys. Rev. Lett. 92, 126603 (2004).
52. Z. G. Yu and M. E. Flatte, J. Supercond. 16, 233 (2003).
53. S. Saikin, J. Phys.: Condens. Matter 16, 5071 (2004).
54. R. J. Elliott, Phys. Rev. 96, 266 (1954).
55. Y. V. Pershin and V. Privman, Nano Lett. 3, 695 (2003).
56. E. Y. Sherman, Phys. Rev. B 67, 161303 (2003).
57. M. Q. Weng and M. W. Wu, J. Appl. Phys. 93, 410 (2003).
58. M. Q. Weng and M. W. Wu, Phys. Rev. B 68, 075312 (2003)
59. I. Zutic, J. Fabian, and D. Sarma, Phys. Rev. Lett. 88, 066603 (2002).
60. I. Malajovich, J. J. Berry, N. Samarth, and D. D. Awschalom, Nature (London) 411, 770 (2001).