Anisotropy of epitaxial Fe films grown on n-type GaAs by electrodeposition

Journal of Applied Physics

Volumn 95, Issue 11 II, 2004, Pages 6546-6548

  Liu, Y K ^a   Scheck, C ^a   Schad, R ^a   Ding, Y ^a   Alexander Jr , C ^a   Zangari, G ^b  

^a University of Alabama   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL MEASUREMENT SYSTEMS (DMS); FERROMAGNETIC RESONANCE (FMR); OXIDATION STATES; SPIN INJECTION;

ANISOTROPY; BAND STRUCTURE; DEPOSITION; ELECTRODEPOSITION; ELECTRODES; ELECTROPLATING; EPITAXIAL GROWTH; FERROMAGNETIC RESONANCE; GRAIN BOUNDARIES; IRON; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTERING; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 2942685516     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1667434     Document Type: Conference Paper

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