Modelling of gate-induced spin precession in a striped channel high electron mobility transistor

Solid State Communications

Volumn 104, Issue 2, 1997, Pages 85-89

  Bournel, A ^a   Dollfus, P ^a   Galdin, S ^a   Musalem, F X ^a   Hesto, P ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIALS; GATES (TRANSISTOR); HETEROJUNCTIONS; MONTE CARLO METHODS; POLARIZATION; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

FERROMAGNETIC CONTACTS; SPIN POLARIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031258130     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00278-0     Document Type: Article

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