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Japanese Journal of Applied Physics

Volumn 48, Issue 12, 2009, Pages

Carbon nanotube interconnection and its electrical properties for semiconductor applications

(3) Lee, Sunwoo a Lee, Boong Joo a,b Shin, Paik Kyun a,c

a SAMSUNG Electronics (South Korea)

b Namseoul University (South Korea)

c Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; BOTTOM ELECTRODES; CONTACT LAYERS; ELECTRICAL PROPERTY; ELECTRICAL RESISTANCES; MULTI-WALLED; PLANARIZATION; RESISTANCE VARIATIONS; SEMICONDUCTOR APPLICATIONS; SEMICONDUCTOR PROCESS; SERIES ARRAY; VIA HOLE; VIA INTERCONNECT; VIA RESISTANCE;

CARBON NANOTUBES; ELECTRIC RESISTANCE; SEMICONDUCTOR GROWTH; SILICON WAFERS; TITANIUM; TITANIUM NITRIDE;

ELECTRIC PROPERTIES;

EID: 75149141711 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.125006 Document Type: Article

Times cited : (13)

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