Can we achieve ultra-low resistivity in carbon nanotube-based metal composites?

Applied Physics A: Materials Science and Processing

Volumn 78, Issue 8, 2004, Pages 1175-1179

  Hjortstam, O ^a   Isberg, P ^a   Soderholm S ^a,b   Dai, H ^c  

^a ABB CORPORATE RESEARCH   (Sweden)

^b Comlase AB ^*  (Sweden)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTORS; ELECTRIC POTENTIAL; METALLIC MATRIX COMPOSITES; RELAXATION PROCESSES; RESEARCH AND DEVELOPMENT MANAGEMENT;

BALLISTIC CONDUCTORS; PHASE RELAXATION;

CARBON NANOTUBES;

EID: 1842482487     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-003-2424-x     Document Type: Article

References (18)

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14. One obvious limitation of the effective-medium model is that scattering effects induced in the material due to the filler particles (CNTs) are not accounted for. For example, in a Cu-Ag alloy with 1% Ag the resistivity is increased by ~ 20% due to the Ag impurities in the Cu matrix. The average distance between the Ag atoms in such an alloy is ~ 1 nm. In a SWNT-metal composite with 10%-50% filling of parallel SWNTs the average distance between the tubes (in a plane perpendicular to the tube directions) is 0.5-3 nm (i.e. the same order of distance as for the Cu-Ag(1%) alloy case). However, the lengths between the scattering centres in the direction parallel to the tubes (i.e. the conducting direction) are in the range of several μm. From these geometrical considerations we argue that the scattering effect in a CNT-metal composite should be much smaller compared to the scattering effects in the Cu-Ag(1%) alloy
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