Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 102-106

  Sugimoto, H ^a   Tajima, M ^a   Eguchi, T ^b   Yamaga, I ^b   Saitoh, T ^c  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b Dai Ichi Kiden Co Ltd   (Japan)

^c TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Intra grain defects; Photoluminescence; Polycrystalline Si; Solar cell

Indexed keywords

CRYSTAL STRUCTURE; MAPPING; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SOLAR CELLS;

INTRA-GRAIN DEFECTS; MACROSCOPIC MAPPING; POLYCRYSTALLINE SI;

SILICON WAFERS;

EID: 33744510848     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.033     Document Type: Article

References (5)

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