Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

Applied Physics Letters

Volumn 96, Issue 2, 2010, Pages

  Luna, E ^a   Satpati, B ^a,c   Rodriguez, J B ^b   Baranov, A N ^b   Tourni E ^b   Trampert, A ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSITÉ MONTPELLIER II   (France)

^c CSIR CENTRAL MECHANICAL ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DARK-FIELD; ELEMENT DISTRIBUTION; EXTREME CASE; INAS; INAS/GASB; INTENSITY PROFILES; INTERFACE STRUCTURES; INTERFACIAL INTERMIXING; SIGMOIDAL FUNCTIONS; TEM; TEM IMAGES;

CRYSTAL GROWTH; DISTRIBUTION FUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SUPERLATTICES;

TRANSMISSION ELECTRON MICROSCOPY;

EID: 74549120175     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3291666     Document Type: Article

References (17)

1. H. Kroemer, Physica E (Amsterdam) 1386-9477 20, 196 (2004). 10.1016/j.physe.2003.08.003
2. M. Razeghi, Eur. Phys. J.: Appl. Phys. 1286-0042 23, 149 (2003). 10.1051/epjap:2003056
3. M. W. Wang, D. A. Collins, T. C. McGill, R. W. Grant, and R. M. Feenstra, J. Vac. Sci. Technol. B 1071-1023 13, 1689 (1995). 10.1116/1.587879
4. R. Kaspi, J. Cryst. Growth 0022-0248 201, 864 (1999). 10.1016/S0022-0248(98)01476-6
5. R. M. Feenstra, D. A. Collins, D. Z.-Y. Ting, M. W. Wang, and T. C. McGill, Phys. Rev. Lett. 0031-9007 72, 2749 (1994). 10.1103/PhysRevLett.72.2749
6. K. Mahalingam, K. G. Eyink, G. J. Brown, D. L. Dorsey, C. F. Kisielowski, and A. Thust, Appl. Phys. Lett. 0003-6951 88, 091904 (2006). 10.1063/1.2178771 (Pubitemid 43334421)
7. Q. Xie, J. E. Van Nostrand, J. L. Brown, and C. E. Stutz, J. Appl. Phys. 0021-8979 86, 329 (1999). 10.1063/1.370733
8. J. Steinshnider, J. Harper, M. Weimer, C. -H. Lin, S. S. Pei, and D. H. Chow, Phys. Rev. Lett. 0031-9007 85, 4562 (2000). 10.1103/PhysRevLett.85.4562 (Pubitemid 32024891)
9. J. B. Rodriguez, P. Christol, L. Cerutti, F. Chevrier, and A. Joullí, J. Cryst. Growth 0022-0248 274, 6 (2005). 10.1016/j.jcrysgro. 2004.09.088 (Pubitemid 40034607)
10. M. Müller, A. Cerezo, and G. D. W. Smith, Microscopy of Semiconducting Materials Conference (MSM XVI, Oxford, 2009).
11. E. Luna, F. Ishikawa, P. D. Batista, and A. Trampert, Appl. Phys. Lett. 0003-6951 92, 141913 (2008). 10.1063/1.2907508
12. E. Luna, F. Ishikawa, B. Satpati, J. B. Rodriguez, E. Tourní, and A. Trampert, J. Cryst. Growth 311, 1739 (2009). 10.1016/j.jcrysgro.2008.10.039
13. E. Luna, A. Guzmán, and A. Trampert, 26th North-American MBE conference, Princeton, 2009 (unpublished).
14. H. Cerva, Appl. Surf. Sci. 0169-4332 50, 19 (1991). 10.1016/0169-4332(91) 90134-6 (Pubitemid 21664523)
15. K. Muraki, S. Fukatsu, Y. Shiraki, and R. Ito, Appl. Phys. Lett. 0003-6951 61, 557 (1992). 10.1063/1.107835
16. The profiles predicted by the segregation models are based on the assumption of initial perfectly squarelike interfaces, which is unlikely to exist in reality.
17. C. Renard, X. Marcadet, J. Massies, I. Pŕvot, R. Bisaro, and P. Galtier, J. Cryst. Growth 0022-0248 259, 69 (2003). 10.1016/j.jcrysgro.2003.07. 010