Selective epitaxial growth of 4H-SiC at reduced temperatures using halo-carbon precursor

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Krishnan, Bharat ^a   Das, Hrishikesh ^a   Lin, Huang De ^a   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; MORPHOLOGY; NUCLEATION; SILICON;

HALO-CARBON PRECURSOR; MESA WALLS; MORPHOLOGY DEGRADATION; POLYTYPE;

CARBON;

EID: 33846107435     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2423323     Document Type: Article

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