Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD

Journal of Alloys and Compounds

Volumn 491, Issue 1-2, 2010, Pages 45-48

  Saidi, F ^a   Hamila, R ^a   Maaref, H ^a   Rodriguez, Ph ^b   Auvray, L ^b   Monteil, Y ^b  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

BInGaAs; HRXRD; InGaAs; MOCVD; Photoluminescence

Indexed keywords

ABNORMAL BEHAVIOR; BORON ATOM; CARRIER RECOMBINATION; GAAS; GROWTH CONDITIONS; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; LATTICE-MATCHED; LOCALIZED STATE; LOW ENERGIES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; NONUNIFORM; OPTICAL STUDY; PEAK ENERGY; PL BANDS; QUANTUM WELL; STRAIN EFFECT; TEMPERATURE DEPENDENCE;

BORON; BORON COMPOUNDS; GALLIUM ALLOYS; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 74449088940     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.10.244     Document Type: Article

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