Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition

Microelectronics Journal

Volumn 40, Issue 1, 2009, Pages 87-91

  Wang, Qi ^a   Ren, Xiaomin ^a   Huang, Hui ^a   Huang, Yongqing ^a   Cai, Shiwei ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

BAlAs; BGaAs; BGaInAs; Metalorganic chemical vapor deposition; MQW; Triethylboron

Indexed keywords

ALUMINUM; ARSENIC; BORON; BORON COMPOUNDS; EPILAYERS; GROWTH (MATERIALS); GROWTH TEMPERATURE; LIGHT EMISSION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; VAPOR DEPOSITION; VAPORS; ZINC;

BALAS; BGAAS; BGAINAS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MQW; TRIETHYLBORON;

GALLIUM ALLOYS;

EID: 57849143762     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.066     Document Type: Article

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