Extreme scaled gate dielectrics by using ALD HfO2/SrTiO 3 composite structures

ECS Transactions

Volumn 25, Issue 4, 2009, Pages 263-274

  Pierreux, D ^a   Machkaoutsan, V ^a   Tois, E ^b   Swerts, J ^c   Schram, T ^c   Adelmann, C ^c   Van Elshocht, S ^c   Popovici, M ^c   Conard, T ^c   Tseng, J ^c   Ragnarsson, L A ^c   Maes, J W ^a  

^a ASM BELGIUM   (Belgium)

^b ASM Microchemistry Oy   (Finland)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BUDGET CONTROL; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; REDUCTION; THRESHOLD VOLTAGE;

COMPOSITE STACKS; CONDUCTION BAND EDGE; DIELECTRIC STACK; EFFECTIVE WORK FUNCTION; EQUIVALENT OXIDE THICKNESS; INTERFACE OXIDE; TEMPERATURE DEPENDENT; THRESHOLD VOLTAGE SHIFTS;

ATOMIC LAYER DEPOSITION;

EID: 74249118784     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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