ALD La-based oxides for vt-tuning in high-k/metal gate stacks

ECS Transactions

Volumn 11, Issue 7, 2007, Pages 201-211

  Swerts, J ^a   Fedorenko, Y ^a   Maes, J W ^a   Tois, E ^b   Delabie, A ^c   Ragnarsson, L A ^c   Yu, H Y ^c   Nyns, L ^c   Adelmann, C ^c   Van Elshocht, S ^c  

^a ASM BELGIUM   (Belgium)

^b ASM Microchemistry Oy   (Finland)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; BUDGET CONTROL; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH-K DIELECTRIC; LANTHANUM OXIDES; LEAKAGE CURRENTS; OXIDE FILMS; SILICA; SILICON; TUNING; ULTRATHIN FILMS;

COMPOSITION CONTROL; EQUIVALENT OXIDE THICKNESS; GATE DIELECTRIC LAYERS; GATE OXIDE FILMS; GATE-LEAKAGE CURRENT; HIGH-K/METAL GATES; NMOS TRANSISTORS; SUBSTRATE INHIBITION;

HAFNIUM COMPOUNDS;

EID: 43549107150     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779084     Document Type: Conference Paper

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