High mobility channel CMOS technologies for realizing high performance LSI's

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2009, Pages 153-160

  Takagi, Shinichi ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ENGINEERING; CMOS TECHNOLOGY; DRIVE CURRENTS; GATE STRUCTURE; HIGH MOBILITY CHANNELS; HIGH-PERFORMANCE CMOS; II-IV SEMICONDUCTORS; MOSFETS; PHYSICAL LIMITATIONS; SHORT-CHANNEL EFFECT; SI CMOS; STRAINED-SI; TECHNOLOGY NODES; ULTRATHIN BODY;

GERMANIUM; INTEGRATED CIRCUITS; SEMICONDUCTING SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 74049124494     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2009.5280866     Document Type: Conference Paper

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