Characterization of excitons in wurtzite GaN quantum wells under valence band mixing, strain, and piezoelectric field

IEEE Journal of Quantum Electronics

Volumn 35, Issue 4, 1999, Pages 590-602

  Bulutay, C ^a,b   Dagli, N ^a   Imamoglu A ^a  

^a University of California at Santa Barbara   (United States)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; FINITE ELEMENT METHOD; NITRIDES; OPTICAL DEVICES; OPTICAL MATERIALS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS;

FRANZ-KELDYSH EFFECT; GALLIUM NITRIDE; STARK EFFECT; VALENCE BAND MIXING; WURTZITE SEMICONDUCTORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032629346     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.753664     Document Type: Article

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