High quality, high efficiency and ultrahigh In-content InGaN QWs - The problem of thermal stability

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1662-1664

  Fuhrman, D ^a   Jonen H ^a   Hoffmann, L ^a   Bremers, H ^a   Rossow, U ^a   Hangleiter, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT LAYERS; CRITICAL TEMPERATURES; DEVICE APPLICATION; ELEVATED TEMPERATURE; EMISSION WAVELENGTH; GAN CAP; HETEROSTRUCTURES; HIGH EFFICIENCY; HIGH QUALITY; INDIUM CONCENTRATION; INTER-DIFFUSION; INTERNAL QUANTUM EFFICIENCY; LIGHT EMITTERS; NITROGEN BONDS; OUT-DIFFUSION; PL INTENSITY; POST ANNEALING; QUANTUM WELL; SYSTEMATIC STUDY; THERMAL STABILITY;

GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; PHASE INTERFACES; PHASE SEPARATION; SEMICONDUCTOR GROWTH; THERMOGRAVIMETRIC ANALYSIS;

QUANTUM EFFICIENCY;

EID: 56249117056     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778575     Document Type: Conference Paper

References (5)

1. D. Fuhrmann, C. Netzel, U. Rossow, A. Hangleiter, G. Ade, and P. Hinze, Appl. Phys. Lett. 88, 071105 (2006).
2. A. Hangleiter, D. Fuhrmann, M. Greve, F. Hitzel, G. Klewer, S. Lahmann, C. Netzel, N. Riedel, and U. Rossow, phys. stat. sol. (a) 201, 2808 (2004).
3. D. Fuhrman, U. Rossow, C. Netzel, H. Bremers, G. Ade, P. Hinze, and A. Hangleiter: phys. stat. sol. (c) 3, 1966 (2006).
4. A. Hangleiter, J.S. Im, J. Off, and F. Scholz, phys. stat. sol. (b) 216, 427 (1999).
5. M.D. McCluskey, L.T. Romano, B.S. Krusor, and N.M. Johnson, Appl. Phys. Lett. 73, 1281 (1998).