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Volumn 583, Issue 1, 2007, Pages 64-70
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CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes
a
CERN
(Switzerland)
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Author keywords
Annealing; CCE; MCz; P Type; Radiation hardness; RD50; Silicon
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Indexed keywords
ANNEALING;
DIODES;
DOPING (ADDITIVES);
LEAKAGE CURRENTS;
PROTON IRRADIATION;
RADIATION HARDENING;
CHARGE COLLECTION EFFICIENCY (CCE);
DEPLETION VOLTAGES;
MAGNETIC CZOCHRALSKI (MCZ) SILICON;
THERMAL DONORS;
SILICON;
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EID: 36448934893
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nima.2007.08.201 Document Type: Article |
Times cited : (6)
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References (18)
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