The effect of thermal treatment on the electrical properties of titanium nitride thin films by filtered arc plasma method

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1921-1924

  Wang, J M ^a   Liu, W G ^a   Mei, T ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Annealing; C. Electrical properties; Filtered arc plasma; TiN thin film

Indexed keywords

FILTER ARC PLASMAS (FAP); FILTERED ARC DEPOSITION (FAD); TEMPERATURE COEFFICIENT OF RESISTANCE (TCR); TIN THIN FILMS;

AGGLOMERATION; ANNEALING; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HEAT TREATMENT; INFRARED RADIATION; OXIDATION; PLASMA APPLICATIONS; THIN FILMS; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

TITANIUM NITRIDE;

EID: 4344641973     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.042     Document Type: Conference Paper

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