TiO2 nanocrystal prepared by atomic-layer-deposition system for non-volatile memory application

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2523-2526

  Lin, Cha Hsin ^a   Wang, Ching Chiun ^a   Tzeng, Pei Jer ^a   Maikap, Siddheswar ^a   Lee, Heng Yuan ^a   Lee, Lurng Shehng ^a   Tsai, Ming Jinn ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

ALD; Annealing; Memory; Nanocrystal; TiO2

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; NONVOLATILE STORAGE; RAPID THERMAL ANNEALING; TITANIUM DIOXIDE; VOLTAGE MEASUREMENT;

ALD SYSTEMS; ANNEALING TIME; LAMINATED STRUCTURE; NONVOLATILE MEMORY APPLICATION;

NANOCRYSTALS;

EID: 34547874696     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2523     Document Type: Article

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