Microstructural evolution of metal-insulator-metal capacitor prepared by atomic-layer-deposition system at elevated temperature

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3036-3039

  Lin, C H ^a   Wang, C C ^a   Tzeng, P J ^a   Liang, C S ^a   Lo, W M ^a   Li, H Y ^a   Lee, L S ^a   Lo, S C ^a   Chou, Y W ^a   Tsai, M J ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Atomic layer deposition; Capacitor; Titanium nitride

Indexed keywords

ANNEALING; CAPACITORS; DEPOSITION; MICROSTRUCTURE; NUCLEATION; SURFACE ROUGHNESS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION; HIGH-TEMPERATURE THERMAL ANNEALING; MICROSTRUCTURAL EVOLUTION; MULTI-STACK METALINSULATOR-METAL CAPACITORS;

MIM DEVICES;

EID: 33646901047     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3036     Document Type: Article

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