Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications

New Journal of Physics

Volumn 11, Issue , 2009, Pages

  Hong, Young Joon ^a   Jeon, Jong Myeong ^b   Kim, Miyoung ^b   Jeon, Seong Ran ^c   Park, Kyung Ho ^d   Yi, Gyu Chul ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Seoul National University   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

^d Korea Advanced Nano Fab Center (KANC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTROSCOPY; COAXIAL COATING; COAXIAL NANOTUBES; COHERENT INTERFACE; CONTROLLED GROWTH; GAN LAYERS; GREEN LEDS; HETEROEPITAXIAL; HETEROEPITAXIAL GROWTH; HETEROSTRUCTURES; HIGH QUALITY; LIGHT EMITTING DEVICES; METAL-ORGANIC; MG-DOPED; MULTIPLE QUANTUM WELLS; NANO-DEVICES; NANOSCALE ELECTRONICS; OPTICAL CHARACTERISTICS; P-TYPE GAN; QUANTUM STRUCTURE; SINGLE-CRYSTALLINE; STRUCTURAL CHARACTERISTICS; TEM; TEM ANALYSIS; VAPOUR-PHASE; ZNO; ZNO NANOTUBE;

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; COMMUNICATION CHANNELS (INFORMATION THEORY); CRYSTALS; EPITAXIAL GROWTH; FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; NANOTUBES; OPTICAL MATERIALS; ORGANIC LIGHT EMITTING DIODES (OLED); PHASE INTERFACES; POSITION CONTROL; SEMICONDUCTOR QUANTUM WELLS; ZINC OXIDE;

QUALITY CONTROL;

EID: 73549110100     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/11/12/125021     Document Type: Article

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