A 10-kV large-area 4H-SiC power DMOSFET with stable subthreshold behavior independent of temperature

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1807-1815

  Howell, Robert S ^a   Buchoff, Steven ^a   Van Campen, Stephen ^a   McNutt, Ty R ^a   Ezis, Andris ^a   Nechay, Bettina ^a   Kirby, Christopher F ^a   Sherwin, Marc E ^a   Clarke, R Chris ^a   Singh, Ranbir ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b GENESIC SEMICONDUCTOR INC   (United States)

Author keywords

Power MOSFETs; Power switching; Silicon carbide; Subthreshold behavior

Indexed keywords

EPITAXIAL GROWTH; EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; NONMETALS; OPTICAL ENGINEERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

DMOSFET; EPITAXIAL REGROWTH; NORMALLY OFF; POWER MOSFETS; POWER SWITCHING; SILICON CARBIDE DEVICES; SUB THRESHOLDS; SUBTHRESHOLD BEHAVIOR; THIN EPITAXIAL LAYER;

SILICON CARBIDE;

EID: 49249106389     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.928204     Document Type: Article

References (12)

1. G. Walden, T. McNutt, M. Sherwin, S. Van Campen, R. Singh, and R. Howell, "Comparison of 10 kV 4H-SiC power MOSFETs and IGBTs for high frequency power conversion," in Proc. ICSCRM, Otsu, Japan, 2007.
2. A. Saha and J. A. Cooper, "1-kV 4H-SiC power DMOSFET optimized for low on-resistance," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2786-2791, Oct. 2007.
3. 2 4H-SiC power DMOSFETs," IEEE Electron Device Lett., vol. 25, no. 8, pp. 556-558, Aug. 2004.
4. S. Ryu, S. Krishnaswami, B. Hull, J. Richmond, A. Agarwal, and A. Hefner, "10 kV, 5A 4H-SiC power DMOSFET," in Proc. 18th ISPSD, Naples, Italy, Jun. 4-8, 2006, pp. 265-268.
5. A. Agarwal and S. Ryu, "Status of SiC power devices and manufacturing issues," in Proc. Compound Semicond. MANTECH Conf., Vancouver, BC, Canada, Apr. 24-27, 2006, pp. 215-218.
6. V. Veliadis, M. McCoy, T. McNutt, H. Hearne, L. S. Chen, G. DeSalvo, C. Clarke, B. Geil, D. Katsis, and C. Scozzie, "Fabrication of a robust high-performance floating guard ring edge termination for power silicon carbide vertical junction field effect transistors," in Proc. Compound Semicond. MANTECH Conf., Austin, TX, May 14-17, 2007, pp. 217-221.
7. V. Veliadis, T. McNutt, M. McCoy, H. Hearne, G. DeSalvo, C. Clarke, P. Potyraj, and C. Scozzie, "1200-V, 50-A, silicon carbide vertical junction field effect transistors for power switching applications," in Proc. ICSCRM, Otsu, Japan, 2007.
8. R. Singh, D. C. Capell, M. K. Das, L. A. Lipkin, and J. W. Palmour, "Development of high current 4H-SiC ACCUFET," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 471-478, Feb. 2003.
9. 2," Electron. Lett., vol. 39, no. 1, pp. 152-154, Jan. 2003.
10. H. F. Hamann, A. Weger, J. A. Lacey, Z. Hu, P. Bose, E. Cohen, and J. Wakil, "Hotspot-limited microprocessors: Direct temperature and power distribution measurements," IEEE J. Solid-State Circuits, vol. 42, no. 1, pp. 56-65, Jan. 2007.
11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, p. 447.
12. B. J. Baliga, Power Semiconductor Devices. Boston, MA: PWS-Kent, 1996, pp. 367-373.