Theoretical and experimental analyses of safe operating area (SOA) of 1200-V 4H-SiC BJT

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1887-1893

  Gao, Yan ^a,b   Huang, Alex Q ^a   Agarwal, Anant K ^c   Zhang, Qingchun ^c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Safe operating area (SOA); Short circuit; SiC bipolar junction transistor (BJT)

Indexed keywords

BIPOLAR TRANSISTORS; NONMETALS; SILICON; TUNNEL DIODES;

BIPOLAR JUNCTION TRANSISTOR; POWER DENSITIES; SAFE OPERATING AREA; SAFE OPERATING AREA (SOA); SECOND BREAKDOWN; SHORT-CIRCUIT; SIC BIPOLAR JUNCTION TRANSISTOR (BJT); SIC BJT; SILICON CARBIDE DEVICES; TURN-OFF;

SILICON CARBIDE;

EID: 49249123302     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926682     Document Type: Article

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