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Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

High-field hole transport in silicon nanowires

(3) Verma, A a Buin, A K b Anantram, M P c

a TEXAS A AND M UNIVERSITY KINGSVILLE (United States)

b UNIVERSITÉ DE MONTRÉAL (Canada)

c University of Washington (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE CALCULATION; HIGH-FIELD; HOLE DRIFT VELOCITIES; HOLE TRANSPORTS; INTERSUBBAND SCATTERING; MEAN FREE PATH; MONTE CARLO; OPTICAL PHONON INTERACTION; OPTICAL PHONON SCATTERING; ROOM TEMPERATURE; SCATTERING MECHANISMS; SILICON NANOWIRES; SMALL-DIAMETER; TIGHT BINDING; TRANSIENT REGIME;

ACOUSTICS; ELECTRIC FIELDS; ELECTRIC WIRE; NANOWIRES; PHONONS;

ACOUSTIC WAVE SCATTERING;

EID: 72449184123 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3264629 Document Type: Article

Times cited : (15)

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