SCOPUS 정보 검색 플랫폼

2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Volumn , Issue , 2008, Pages 374-376

High-field hole transport in small diameter silicon nanowires

(4) Verma, A a Buin, A b Anantram, M P b Nekovei, R a

a TEXAS A AND M UNIVERSITY KINGSVILLE (United States)

b UNIVERSITY OF WATERLOO (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC WIRE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOWIRES; SILICON;

DEFORMATION POTENTIAL APPROXIMATIONS; ELECTRONIC RESPONSES; FERMI'S GOLDEN RULES; HIGH ELECTRIC FIELDS; HOLE TRANSPORTS; INTERSUBBAND SCATTERINGS; MONTE CARLO; OPTICAL PHONONS; SILICON NANOWIRES; SMALL DIAMETERS; STRUCTURE CALCULATIONS; TRANSIENT RESPONSES; UPPER BOUNDS;

PHONONS;

EID: 55349134177 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/NANO.2008.115 Document Type: Conference Paper

Times cited : (2)

References (7)

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4
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.