Ensemble Monte Carlo transport simulations for semiconducting carbon nanotubes

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Verma, A ^a   Kauser, M Z ^b   Ruden, P P ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MONTE CARLO TRANSPORT SIMULATIONS; PHONON DISPERSIONS; TIGHT-BONDING MODEL; TRANSIENT EFFECTS;

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; MONTE CARLO METHODS; SCANDIUM;

CARBON NANOTUBES;

EID: 20544459298     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1925763     Document Type: Article

References (28)

1. S. Iijima, Nature (London) 354, 56 (1991).
2. N. Hamada, S. Sawada, and A. Oshiyama, Phys. Rev. Lett. 68, 1579 (1992).
3. R. Saito, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rev. B 46, 1804 (1992).
4. M. Ge and K. Sattler, Appl. Phys. Lett. 65, 2284 (1994).
5. T. W. Odom, J. L. Huang, P. Kim, and C. M. Lieber, Nature (London) 391, 62 (1998).
6. R. R. Schlittler, J. W. Seo, J. K. Glimzewski, C. Durkan, M. S. M. Saifullah, and M. E. Welland, Science 292, 1136 (2001).
7. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
8. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
9. J. A. Misewich, R. Martel, Ph. Avouris, J. C. Tsang, S. Heinze, and J. Tersoff, Science 300, 783 (2003).
10. J. C. Bunning, K. J. Donovan, and K. Scott, J. Appl. Phys. 96, 3939 (2004).
11. G. Pennington and N. Goldsman, IEICE Trans. Electron. E86-C, 372 (2003).
12. G. Pennington and N. Goldsman, Phys. Rev. B 68, 045426 (2003).
13. Early results of this work were presented at the 27th International Conference on Physics of Semiconductors (ICPS), Flagstaff, AZ, 2004 (unpublished).
14. Monte Carlo Device Simulation: Full Band and Beyond, edited by, K. Hess, (Kluwer Academic, Dordrecht, Netherlands, 1991).
15. R. Saito, M. S. Dresselhaus, and G. Dresselhaus, Physical Properties of Carbon Nanotubes (Imperial College Press, London, 1998).
16. A. Kleiner and S. Eggert, Phys. Rev. B 64, 113402 (2001).
17. J. W. Ding, X. H. Yan, and J. X. Cao, Phys. Rev. B 66, 073401 (2002).
18. K. Kanamitsu and S. Saito, J. Phys. Soc. Jpn. 71, 483 (2002).
19. W. A. Harrison, Electronic Structure and the Properties of Solids: The Physics of the Chemical Bond (Freeman, San Francisco, 1980).
20. R. A. Jishi, L. Venkataraman, M. S. Dresselhaus, and G. Dresselhaus, Chem. Phys. Lett. 209, 77 (1993).
21. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, and H. Dai, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.106804 92, 106804 (2004); M. Freitag, V. Perebeinos, J. Chen, A. Stein, J. C. Tsang, J. A. Misewich, R. Martel, and Ph. Avouris, Nano Lett. 4, 1063 (2004).
22. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, and H. Dai, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.106804 92, 106804 (2004); M. Freitag, V. Perebeinos, J. Chen, A. Stein, J. C. Tsang, J. A. Misewich, R. Martel, and Ph. Avouris, Nano Lett. 4, 1063 (2004).
23. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer, Wein, 1989).
24. F. M. Peeters, W. V. Puymbroeck, and J. T. Devreese, Phys. Rev. B 31, 5322 (1985).
25. D. L. Rode, in Low-Field Transport in Semiconductors, Semiconductors and Semimetals Vol. 10, edited by, R. K. Willardson, and, A. C. Beer, (Academic, New York, 1972).
26. P. L. McEuen, M. S. Fuhrer, and H. Park, IEEE Trans. Nanotechnol. 1, 78 (2002).
27. D. Jovanovic and J. P. Leburton, Superlattices Microstruct. 11, 141 (1992).
28. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, and H. Dai, Phys. Rev. Lett. 92, 106804 (2004).