Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Virgilio, Michele ^a   Grosso, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; LIGHT ABSORPTION; SEMICONDUCTING SILICON;

INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITIONS; QUANTUM WELL SAMPLES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33751084046     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360144     Document Type: Article

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