Monte Carlo calculations of electron transport in silicon and related effects for energies of 0.02-200 keV

Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

  Akkerman, A ^a   Murat, M ^a   Barak, J ^a  

^a SOREQ NUCLEAR RESEARCH CENTER   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING COEFFICIENTS; ELECTRON BEAM APPLICATIONS; ELECTRON TRANSPORT; ENERGY DISTRIBUTIONS; INPUT DATAS; ION TRACK; MONTE CARLO CALCULATION; SECONDARY ELECTRONS; TEMPORAL EVOLUTION; WIDE ENERGY RANGE;

BACKSCATTERING; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS;

ELECTRON TRANSITIONS;

EID: 72449162117     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3256195     Document Type: Article

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