Verification of hot hole scattering rates in silicon by quantum-yield experiment

Journal of Applied Physics

Volumn 88, Issue 10, 2000, Pages 5802-5809

  Kamakura, Yoshinari ^a   Kawashima, Ichiro ^a   Deguchi, Kazuaki ^a   Taniguchi, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000920202     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1317239     Document Type: Article

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