Investigation of range-energy relationships for low-energy electron beams in silicon and gallium nitride

Scanning

Volumn 29, Issue 6, 2007, Pages 280-286

  Kurniawan, O ^a   Ong, V K S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Electron beam; Electron range; Generation volume; Monte Carlo

Indexed keywords

BIPOLAR DEVICES; GRUEN RANGE; HOFF UNIVERSAL CURVE; INTERACTION VOLUME;

COMPUTER SIMULATION; GALLIUM NITRIDE; PHOTODIODES; SCANNING ELECTRON MICROSCOPY; SILICON;

ELECTRON BEAMS;

GALLIUM; GALLIUM NITRIDE; SILICON; UNCLASSIFIED DRUG;

ACCURACY; ARTICLE; COMPUTER PROGRAM; DEVICE; ELECTRON BEAM; ENERGY; MATHEMATICAL COMPUTING; MONTE CARLO METHOD; PRIORITY JOURNAL; STATISTICAL ANALYSIS;

EID: 37249048821     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.20070     Document Type: Article

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