Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate

Applied Physics Letters

Volumn 84, Issue 15, 2004, Pages 2757-2759

  Tan, Bee Sim ^a   Yuan, Shu ^a   Kang, Xue Jun ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Nitride Technologies Pte Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CHEMICAL VAPOR DEPOSITION; CLADDING (COATING); COPPER; DEGRADATION; GALLIUM COMPOUNDS; LASER BEAMS; OPTOELECTRONIC DEVICES; PLASMA ETCHING; PYROLYSIS; RELIABILITY; SAPPHIRE; SEMICONDUCTOR LASERS; THERMAL CONDUCTIVITY; THIN FILMS; ULTRAVIOLET DETECTORS;

EPITAXIAL LAYERS; FILM QUALITY; LASER LIFT-OF (LLO) TECHNIQUE; THERMAL IMPEDANCE;

LIGHT EMITTING DIODES;

EID: 2342614846     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1704862     Document Type: Article

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