Wet chemical etching of wide bandgap semiconductors-gan, ZnO and SiC

ECS Transactions

Volumn 6, Issue 2, 2007, Pages 501-512

  Pearton, S J ^a   Chen, J J ^a   Lim, W T ^a   Ren, F ^a   Norton, D P ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTROCHEMICAL ETCHING; ENERGY GAP; GALLIUM NITRIDE; HIGH TEMPERATURE APPLICATIONS; HYDROFLUORIC ACID; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INTERFACE STATES; LITHOGRAPHY; MAGNETIC SEMICONDUCTORS; NITRIC ACID; OXIDE MINERALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON CARBIDE; WET ETCHING; ZINC OXIDE;

ACID SOLUTIONS; BASE SOLUTION; CRYSTAL POLARITIES; DEVICE FABRICATIONS; GROUP III NITRIDES; HIGH TEMPERATURE DEVICE; PHOTO-ASSISTED; SMOOTH SURFACE;

WIDE BAND GAP SEMICONDUCTORS;

EID: 45749106720     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2731219     Document Type: Conference Paper

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