Energy and temperature dependence of electron effective masses in silicon

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1431-1433

  Cavassilas, Nicolas ^a   Autran, Jean Luc ^a   Aniel, Frédéric ^a   Fishman, Guy ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CARRIER ENERGY; DRIFT DIFFUSION; EFFECTIVE MASS; ELECTRON EFFECTIVE MASS; ELECTRONIC TRANSPORT; ENERGY DEPENDENCE; LATTICE TEMPERATURES; MICRO-ELECTRONIC DEVICES; P-MODEL; SIGNIFICANT IMPACTS; TEMPERATURE DEPENDENCE;

MICROELECTRONICS; MONTE CARLO METHODS;

TEMPERATURE DISTRIBUTION;

EID: 0036677506     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1490620     Document Type: Article

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