Photoluminescence characteristics of InAs quantum dots with GaInP cover layer grown by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 48, Issue 7 PART 1, 2009, Pages

  Sengoku, Tomoyuki ^a   Suzuki, Ryoichiro ^a   Nemoto, Kosuke ^a   Tanabe, Satoru ^a   Koyama, Fumio ^a   Miyamoto, Tomoyuki ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COVER LAYERS; EMISSION WAVELENGTH; GAINP; INAS; INAS QUANTUM DOTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; PEAK WAVELENGTH; PHOTOLUMINESCENCE CHARACTERISTICS; PL EMISSION; THERMAL ANNEALING EFFECTS;

INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 72049085259     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.070203     Document Type: Article

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