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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 1 A/B, 2004, Pages

Elongation of Emission Wavelength of GaInAsSb-Covered (Ga)InAs Quantum Dots Grown by Molecular Beam Epitaxy

(7) Matsuura, Tetsuya a Miyamoto, Tomoyuki a Kageyama, Takeo a,b Ohta, Masataka a Matsui, Yasutaka a Furuhata, Tatsuya a Koyama, Fumio a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b FURUKAWA ELECTRIC CO LTD (Japan)

Author keywords

GaInAs; GaInAsSb; InAs; Molecular beam epitaxy; Quantum dot; Quantum well; Sb

Indexed keywords

ANTIMONY; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); FIBER OPTICS; FREE ENERGY; INTERFACIAL ENERGY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

EMISSION EFFICIENCY; GAINAS; GAINASSB; INAS;

SEMICONDUCTING GALLIUM;

EID: 1842658924 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L82 Document Type: Article

Times cited : (16)

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