Structured ZnO-based contacts deposited by non-reactive rf magnetron sputtering on ultra-thin SiO2/Si through a stencil mask

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1044-1047

  Barnabe A ^a   Lalanne, M ^a   Presmanes, L ^a   Soon, J M ^a   Tailhades, Ph ^a   Dumas, C ^b   Grisolia, J ^b   Arbouet, A ^b   Paillard, V ^b   BenAssayag, G ^b   van den Boogaart, M A F ^c   Savu, V ^c   Brugger, J ^c   Normand, P ^d  

^a CNRS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c EPFL   (Switzerland)

^d INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

Nanostructure; Si; SiO2; Stencil mask; Thin film; ZnO

Indexed keywords

GATE OXIDE; MICRO AND NANOSTRUCTURES; RF-MAGNETRON SPUTTERING; SI; SILICON NANOCRYSTALS; STENCIL MASK; STENCIL MASKS; THERMAL-ANNEALING; TRANSPARENT ELECTRODE; ULTRA-THIN; ULTRALOW ENERGY ION IMPLANTATION; ZNO; ZNO LAYERS; ZNO NANOSTRUCTURES;

ION BOMBARDMENT; ION IMPLANTATION; MAGNETRON SPUTTERING; MAGNETRONS; MASKS; MOS DEVICES; NANOSTRUCTURES; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES; THIN FILM DEVICES; THIN FILMS;

ZINC OXIDE;

EID: 71949104468     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.232     Document Type: Article

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