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Volumn 10, Issue 2, 2000, Pages 157-162

Silicon shadow mask for deposition on isolated areas

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EVAPORATION; MASKS; MICROELECTRONICS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; SPUTTERING;

EID: 0033715606     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/10/2/310     Document Type: Article
Times cited : (44)

References (3)
  • 2
    • 0001176399 scopus 로고
    • In situ grown-in selective contacts to n-i p-i doping superlattice crystals using molecular beam epitaxial growth through a shadow mask
    • Dhler G H, Hasnain G and Miller J N 1986 In situ grown-in selective contacts to n-i p-i doping superlattice crystals using molecular beam epitaxial growth through a shadow mask Appl. Phys. Lett. 49 704-6
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 704-706
    • Dhler, G.H.1    Hasnain, G.2    Miller, J.N.3
  • 3
    • 0000937884 scopus 로고    scopus 로고
    • Delay-masking process for silicon three-dimensional bulk structures
    • Mita M, Mita Y, Toshiyoshi H and Fujita H 1999 Delay-masking process for silicon three-dimensional bulk structures Trans. IEE Japan 119-E 310-11
    • (1999) Trans. IEE Japan , vol.119 E , pp. 310-311
    • Mita, M.1    Mita, Y.2    Toshiyoshi, H.3    Fujita, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.