Resolution improvement of ion projector with a low energy spread multicusp ion source

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 477-480

  Bruenger, W H ^a   Torkler, M ^a   Leung, K N ^b   Lee, Y ^b   Williams, M D ^b   Loeschner, H ^c   Stengl, G ^c   Fallmann, W ^d   Paschke, F ^d   Stangl, G ^d   Rangelow, I W ^e   Hudek, P ^e  

^a FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c IMS   (Austria)

^d VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^e UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; ION SOURCES; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY;

CRITICAL POINT DRYING; MULTICUSP ION SOURCES;

ION BEAM LITHOGRAPHY;

EID: 0033130759     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00044-1     Document Type: Article

References (6)

1. 1. Dong-Ho Cha et al. SPIE Vol. 3334 (1998)
2. 2. W. H. Bruenger, H Buschbek, E. Cekan, S. Eder, T. H. Fedynyshyn, W. G. Hertlein, P. Hudek, I. Kostic, H. Loeschner, I. W. Rangelow, M. Torkler Microelectronic Engineering 41/42 (1998) 237-234
3. 3. Y. Lee, R. A. Gough, K. N. Leung, J. Vujic, M. D. Williams, N. Zahir, W. Fallmann, M. Torkler, W. H. Bruenger EIPBN-98, Chicago May 26-29 (1998) to be puplished in J. Vac. Sci. Techn. (Nov/Dec 1998)
4. 4. J.Melngailis, A. A. Mondelli, Ivan L. Berry III, R. Mohondro A review of ion projection lithography J. Vac. Sci. Technol. B16(3), May/Jun 98
5. 5. L.-M. Buchmann, U. Schnakenberg, M. Torkler, H. Loeschner, G. Stengl, C. Traher, W. Fallmann, G. Stangl and E. Cekan I. Microelectromech. Systems 1, 116 (1992)
6. 6. H. Namatsu, K. Yamazaki and K. Kurihara MNE 1998, Leuven Belgium, Sept. 22-24, 1998 to be published in Microelectr. Engng.