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Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

Gate oxide induced switch-on undershoot current observed in thin-film transistors

(9) Yan, Feng a Migliorato, Piero a Hong, Yi a Rana, V b Ishihara, R b Hiroshima, Y c Abe, D c Inoue, S c Shimoda, T c

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

c SEIKO EPSON CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODE RAY OSCILLOSCOPES; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; ELECTRON MOBILITY; MAGNETIC FIELD EFFECTS; NOISE ABATEMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

GATE DIELECTRICS; GATE OXIDES; MOBILE IONS; PLASTIC SUBSTRATES;

THIN FILM TRANSISTORS;

EID: 24344441213 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1954896 Document Type: Article

Times cited : (14)

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