Wide bandgap semiconductor detectors for harsh radiation environments

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 546, Issue 1-2, 2005, Pages 213-217

  Grant, J ^a   Cunningham, W ^a   Blue, A ^a   O'Shea, V ^a   Vaitkus, J ^b   Gaubas, E ^b   Rahman, M ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

Detector; GaN; Harsh radiation environment; SiC; Wide bandgap

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CHARGE; ENERGY GAP; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RADIATION DAMAGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SILICON CARBIDE; VANADIUM;

CHARGE COLLECTION EFFICIENCY (CCE); HARSH RADIATION ENVIRONMENT; SCHOTTKY DEVICES; WIDE BANDGAPS;

RADIATION DETECTORS;

EID: 20444443969     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.03.038     Document Type: Conference Paper

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