Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Markov, A V ^a   Yugova, T G ^a   Dabiran, A M ^b   Wowchak, A M ^b   Cui, B ^b   Osinsky, A V ^b   Chow, P P ^b   Pearton, S J ^c   Scherbatchev, K D ^d   Bublik, V T ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b SVT ASSOCIATES   (United States)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^d NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; CRYSTALS; ELECTRON GAS; ELECTRONS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GAS PERMEABLE MEMBRANES; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRON DENSITIES; FE DOPING; GAN LAYERS; HETEROSTRUCTURES; LOWER MOBILITY; ORDER-OF MAGNITUDES; SEMI-INSULATING; STRUCTURAL CHARACTERISTICS; X-RAY DIFFRACTION;

MOLECULAR BEAM EPITAXY;

EID: 51849153748     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2973463     Document Type: Article

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