Modification of optical and electrical properties of ITO using a thin Al capping layer

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1160-1163

  Heo, Gi Seok ^a   Park, Jong Woon ^a   Choi, Seok Eui ^b   Jin, Michael H C ^c   Shin, Dong Chan ^b  

^a Korea Institute of Industrial Technology   (South Korea)

^b Chosun University   (South Korea)

^c University of Texas at Arlington   (United States)

Author keywords

Al; Band gap; Capping layer; ITO; Transparent conducting oxides (TCOs); Work function

Indexed keywords

BAND GAPS; CAPPING LAYER; CONVENTIONAL DC MAGNETRON SPUTTERING; HEAT TREATMENT TEMPERATURE; HIGH TRANSMITTANCE; HOLE INJECTION BARRIERS; INDIUM TIN OXIDE THIN FILMS; ITO FILMS; NITROGEN ATMOSPHERES; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL CHARACTERISTICS; RED-SHIFT PHENOMENA; RESISTIVITY VALUES; THERMAL-ANNEALING; TRANSPARENT CONDUCTING OXIDE; VISIBLE WAVELENGTHS;

ALUMINUM; DEPOSITION; ELECTRIC PROPERTIES; ENERGY GAP; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TIN; WORK FUNCTION;

OXIDE FILMS;

EID: 71649103432     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.220     Document Type: Article

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