메뉴 건너뛰기




Volumn 7, Issue 11, 2007, Pages 4021-4024

Decrease in work function of boron ion-implanted ZnO thin films

Author keywords

Boron; Ion implantation; Transmittance; Work function; ZnO

Indexed keywords

ACTIVATION TIME; APPLIED (CO); CARRIER (CO); CARRIER DENSITY; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL SHEET RESISTANCE; GLASS SUBSTRATES; IMPLANTATION PROCESS; ION DOSES; OPTICAL TRANSMITTANCE (T); RAPID THERMAL ANNEAL (RTA) PROCESS; RAPID THERMAL ANNEALING (RTA); VISIBLE-WAVELENGTH RANGE; ZNO FILMS; ZNO THIN FILMS;

EID: 38449088704     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.086     Document Type: Conference Paper
Times cited : (6)

References (14)
  • 6
    • 46349086879 scopus 로고    scopus 로고
    • S. J. Hong, G. S. Heo, J. W. Park, 1. H. Lee, B. H. Choi, J. H. Lee, S. Y. Park, and D. C. Shin, J. Nanosci. Nanotechnol. 7, 1 (2007).
    • S. J. Hong, G. S. Heo, J. W. Park, 1. H. Lee, B. H. Choi, J. H. Lee, S. Y. Park, and D. C. Shin, J. Nanosci. Nanotechnol. 7, 1 (2007).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.