Work function increase of Al-doped ZnO thin films by B+ ion implantation

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 11, 2007, Pages 4077-4080

  Hong, Sang Jin ^a   Heo, Gi Seok ^b   Park, Jong Woon ^b   Lee, In Hwan ^c   Choi, Bum Ho ^b   Lee, Jong Ho ^b   Park, Se Yeon ^b   Shin, Dong Chan ^a  

^a Chosun University   (South Korea)

^b Korea Institute of Industrial Technology   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

Al Doped ZnO; Implantation; TCO; Work Function

Indexed keywords

AL-DOPED ZNO (ZNO:AL); B+ ION IMPLANTATION;

ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTING ZINC COMPOUNDS; SOLIDS; THICK FILMS; THIN FILMS; VAPOR DEPOSITION; WORK FUNCTION; ZINC ALLOYS; ZINC OXIDE;

ALUMINUM;

ALUMINUM; HEAVY ION; NANOMATERIAL; ZINC OXIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION DOSE; RADIATION EXPOSURE; RADIATION RESPONSE; SURFACE PROPERTY; ULTRASTRUCTURE;

ALUMINUM; CRYSTALLIZATION; DOSE-RESPONSE RELATIONSHIP, RADIATION; ELECTRIC CONDUCTIVITY; HEAVY IONS; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION DOSAGE; SURFACE PROPERTIES; ZINC OXIDE;

EID: 38449090022     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.090     Document Type: Conference Paper

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